(MSTIC)

The MSTIC group covers applied and more fundamental research in the field of materials science, chemistry and physics. Synthesis and (physical/structural) characterisation of thin films using the injection MOCVD technique remains an important activity of the group developed during the past years.

The activity of the group is actually organized along three main lines of research:

• Materials for the new generations of silicon-based electronic devices
• High-k dielectrics
• Metallisation - Interconnects 
• Mictamict Alloys
  
• Materials and processes involved in the fields of optics and photonics
• Advanced materials for integrated active optic
• Synthesis of 3D periodic nanostructures in an interference field of UV laser light
  
• Innovative oxide based materials for future TIC
• Oxides nanowires by CVD 
• Multiferroic heterostructures
• Ferroelectric thin films
• Epitaxial stabilisation of RE Nickelates
• Structural investigation in ferroelectric, magnetoresistive and multiferroïc Perovskite materials.
  

The first line of research focus on new materials for elementary transistors suitable for the various levels of interconnects and insulation.
The studies of the second line of research are aimed at improving techniques for elaborating and optimising the properties of optically active thin films. Another study  on photonic crystals concerns the design and perfection of an original optical system for the manufacture of 3-D nanostructured deposits.
The third line of research studies innovative oxides materials with electronic and magnetic functions (ferroelectric and relaxor oxides, giant magnetoresistive and multiferroïcs manganites, metal/insulator properties in nickelates).