Aller au menu Aller au contenu
Grenoble INP
Annuaires
Tél. : +33 (0)4 56 52 93 00
Fax : +33 (0)4 56 52 93 01
Annuaires

M. CONSONNI Vincent

Photo Vincent Consonni - 2.jpg
Chargé de Recherche CNRS

Coordonnées

Laboratoire des Matériaux et du Génie Physique, Grenoble INP & CNRS, 3 parvis Louis Néel, Minatec, 38016 Grenoble, France.

  • Fax : +33 (0) 4 56 52 93 01

Site internet : http://

A+Augmenter la taille du texteA-Réduire la taille du texteImprimer le documentTélécharger au format PDFEnvoyer cette page par mail

Activités / CV

Vincent Consonni received his Engineering Degree from Ecole Nationale Supérieure d'Electrochimie et d'Electrométallurgie de Grenoble in Materials Science in 2004, his PhD in Materials Science and Engineering in 2008 from Grenoble INP, and his “Habilitation à Diriger des Recherches” (HDR) in 2016 from Doctoral School I-MEP2 in Grenoble INP. His PhD thesis research works were carried out in CEA-LETI, Grenoble, on the development of polycrystalline CdTe films for x-ray detectors. He then spent a post-doctoral stay in Paul-Drude-Institut für Festkörperelektronik, Berlin, in which he investigated the nucleation and growth mechanisms of GaN nanowires by molecular beam epitaxy. He subsequently spent a post-doctoral stay in Laboratoire des Technologies de la Microélectronique, Grenoble, in which he investigated the formation mechanisms of ZnO nanowires by chemical deposition techniques. He joined Laboratoire des Matériaux et du Génie Physique as a CNRS research scientist in 2011. His research focuses on the crystal growth and on the physics of condensed matter of micro and nano-structures involving compound semiconductors (i.e. CdTe, GaN, ZnO and SnO2). He is currently working on ZnO nanowires and related heterostructures for electronic and optoelectronic devices as well as on transparent conductive oxides.

More details and a complete list of publications can be found here: https://scholar.google.fr/citations?user=CqUvusgAAAAJ&hl=fr&oi=ao & http://www.researcherid.com/rid/D-9203-2015

 

Last five publications

C. Verrier, E. Appert, O. Chaix-Pluchery, L. Rapenne, Q. Rafhay, A. Kaminski-Cachopo, and V. Consonni, Tunable Morphology and Doping of ZnO Nanowires by chemical Bath Deposition Using Aluminum Nitrate, The Journal of Physical Chemistry C 121, 3573-3583 (2017).

S. Guillemin, R. Parize, J. Carabetta, V. Cantelli, D. Albertini, B. Gautier, G. Brémond, D.D. Fong, H. Renevier, and V. Consonni, Quantitative and Simultaneous Analysis of the Polarity of Polycrystalline ZnO Seed Layers and Nanowires Grown by Wet chemical Deposition, Nanotechnology 28, 095704 (2017).

R. Parize, A. Katerski, I. Gromyko, L. Rapenne, H. Roussel, E. Kärber, E. Appert, M. Krunks, and V. Consonni, ZnO/TiO2/Sb2S3 Core-Shell Nanowire Heterostructures for Extremely Thin Absorber Solar Cells, The Journal of Physical Chemistry C 121, 9672-9680 (2017).

R. Parize, T. Cossuet, O. Chaix-Pluchery, H. Roussel, E. Appert, and V. Consonni, In Situ analysis of the Crystallization Process of Sb2S3 Thin Films by Raman Scattering and X-Ray Diffraction, Materials & Design 121, 1-10 (2017).

T. Cossuet, E. Appert, J.L. Thomassin, and V. Consonni, Polarity-Dependent Growth Rates of Selective Area Grown ZnO Nanorods by Chemical Bath Deposition, Langmuir 33, 6269-6279 (2017).

A+Augmenter la taille du texteA-Réduire la taille du texteImprimer le documentTélécharger au format PDFEnvoyer cette page par mail

Rédigé par Vincent Consonni

mise à jour le 10 octobre 2017

Nous écrire

Les anciens du LMGP / LMGP's alumni

Annuaire des universités

Co-edition

Wide Band Gap Semiconductor Nanowires for Optoelectronic Devices

July 2014, Wiley-ISTE

Editors : Vincent Consonni, Guy Feuillet



1 - Low-Dimensionality Effects and Growth

2- Heterostructures and Optoelectronic Devices
  • Tutelle CNRS
  • Tutelle Grenoble INP
Communauté Université Grenoble Alpes
×
Afin d'améliorer la qualité de ce site et le service rendu à l'utilisateur, nous utilisons des cookies de mesure d’audience. En poursuivant votre navigation sur ce site, vous acceptez l'utilisation de cookies à cette fin. Pour en savoir plus