The aim of this project is threefold: 1.- To develop an atmospheric plasma enhanced spatial atomic layer deposition (APE-SALD) setup. SALD is a recent variation of conventional ALD in which the precursors are separated in space rather than in time, thus allowing processing at atmospheric pressure and orders of magnitude faster deposition rates. Atmospheric plasma assistance would further expand the possibilities of this appealing technique thanks to processing at lower Ts (=150 ºC) with a larger precursor choice. 2.- To apply the developed APE-SALD system for the deposition of ZnO based transparent conductive oxide (TCO) electrodes on Si heterojunction (HET) solar cells, as an alternative to currently used sputtered ITO. SALD is an ideal technique for this HET technology since the presence of active amorphous Si layers on this type of cells requires soft deposition conditions, together with high throughput processing, in order to be industrially competitive. Reciprocally, the stringent processing requirements imposed by HET cells constitute an ideal test bench allowing the evaluation of the full potential of APE-SALD. 3.- On a more fundamental level, to characterize in-situ the plasma and reaction intermediates to understand the reaction mechanisms and the plasma species being generated. .
Publications Spatial Atomic Layer Deposition (SALD), an emerging tool for energy materials. Application to new-generation photovoltaic devices and transparent conductive materials. David Muñoz-Rojas, Viet Huong Nguyen,César Masse de la Huerta, Sara Aghazadehchors, Carmen Jiménez, DanielBellet Comptes Rendus Physique, accepted. Deposition of ZnO based thin films by Atmospheric Pressure Spatial Atomic Layer Deposition (AP-SALD) for application in solar cells Viet Huong Nguyen*, João Resende, Carmen Jiménez, Jean-Luc Deschanvres, Perrine Carroy, Delfina Muñoz, Daniel Bellet, David Muñoz Rojas* Journal of Renewable and Sustainable Energy, 2017, 9, 021203.
Transparent electrodes based on silver nanowire networks: from physical considerations towards device integration Daniel Bellet*, Mélanie Lagrange, Thomas Sannicolo, Sara Aghazadehchords, Viet Huong Nguyen, Daniel Langley, David Muñoz-Rojas, Carmen Jiménez, Yves Brechet, Ngoc Duy Nguyen