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Synthèse et propriétés de monocristaux, de poudres, films minces ou hétérostructures

Etudes à l'interface avec la matière biologique

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Materials Horizons de Viet Nguyen 2018

Publié le 24 mai 2018
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Communiqué du 27 avril 2018 au 24 mai 2018

Le papier "Electron tunneling through grain boundaries in transparent conductive oxides and implications for electrical conductivity" a été publié dans Materials Horizons.

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Ici  vous trouverez le papier de Viet Nguyen
"In this work, we have applied the Airy Function Transfer-Matrix Method to provide a numerical description of the charge scattering mechanisms taking place at the grain boundaries in polycrystalline, degenerately Al-doped ZnO (ZnO:Al) films, one of the most studied Transparent Conductive Oxides (TCOs). By discretizing the potential barrier at the grain boundary into linear segments, an accurate calculation of the electron tunneling probability through the grain boundaries have been obtained. Conversely to analytical models based on the Wentzel–Kramers–Brillouin (WKB) approximation, our new approach is valid for any doping level. We thus provide a complete model that allows a comprehensive explanation for carrier transport in highly doped semiconductors, for which charge tunneling across grain boundaries cannot be neglected. We have tested our model with ZnO:Al thin films prepared by different physical and chemical deposition techniques, namely, sputtering, atomic layer deposition and atmospheric pressure spatial atomic layer deposition. A linear relationship between trap density at the grain boundaries and carrier density has been extracted by fitting our model to Hall mobility data for the different samples. Our results provide a guidance on how to adapt the deposition conditions to obtain high-quality materials, with an optimum ratio between optical and electrical properties as required for specific applications."


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Rédigé par David Munoz-Rojas

mise à jour le 24 mai 2018

  • Tutelle CNRS
  • Tutelle Grenoble INP
Univ. Grenoble Alpes