Study of the 3C- to 6H-SiC polytypic transition at high temperature using high resolution X-ray diffuse scattering.
High resolution microscopic analysis of III-Nitrides nanostructures (quantum wells and dots).
Development of birefringence microscopy as a qualitative and quantitative tool to study dislocations in WBG semiconductors.
Experimental and simulated birefringence patterns of a dislocation in 6H-SiC. The best fit is obtained with b=2a. (Journal of Crystal Growth, 2012)
V. Consonni, E. Sarigiannidou, E. Appert, A. Bocheux, S. Guillemin, F. Donatini, I.C. Robin, J. Kioseoglou, F. Robault Selective Area Growth of Well-Ordered ZnO Nanowire Arrays with Controllable Polarity, ACS Nano, Vol. 8 (2014) p. 4761-4770.
L. Monteagudo-Lerma, S. Valdueza-Felip, F. B. Naranjo, P. Corredera, L. Rapenne, E. Sarigiannidou, G. Strasser, E. Monroy, and M. González-Herráez Waveguide saturable absorbers at 1.55µm based on intraband transitions in GaN/AlN QDs, OPTICS EXPRESS Vol. 21 (2013) p.27578-27586.
L.T.M. Hoa, T. Ouisse, D. Chaussende, Critical assessment of birefringence imaging of dislocations in 6H silicon carbide, Journal of Crystal Growth, Vol. 354 (2012) p. 202-207.