A numerical model has been implemented with the aim of giving quantitative outcomes in addition to qualitative information. The major role of the convection patterns on the carbon flux is demonstrated. A good agreement between computed and experimental growth rates is obtained as a function of temperature, making simulation an adapted predictive tool for the further development of the process.
Carbon supersaturation distribution in liquid silicon for the TSSG growth of SiC at 1800°C (Crystal growth & Design, 2012).
J. Lefebure, J.M. Dedulle, T. Ouisse, D. Chaussende, Modeling of the growth rate during top seeded solution growth of SiC using pure silicon as a solvent, Crystal growth & Design, Vol. 12 (2012) p. 909-913.
K. Seki, Alexander, S. Kozawa, T. Ujihara, P. Chaudouet, D. Chaussende, Y. Takeda, Formation process of 3C-SiC on 6H-SiC (0001) by low-temperature solution growth in Si-Sc-C system, Journal of Crystal Growth, Vol. 335 (2011) p. 94-99.
F. Mercier, J.M. Dedulle, D. Chaussende, M. Pons, Coupled heat transfer and fluid dynamics modeling of high-temperature SiC solution growth, Journal of Crystal Growth, Vol. 312 (2010) p. 155-163.