Using a coupled experimental and numerical simulation approach, the nucleation and propagation of foreign polytypes during seeded sublimation growth of silicon carbide is addressed on a macroscopic basis.
Cross-section of a 4H-SiC crystal observed under a cross-polarized microscope. (Crystal Growth & Design, 2015)
N. Tsavdaris, K. Ariyawong, J.M. Dedulle, E.Sarigiannidou, D. Chaussende, Macroscopic Approach to the Nucleation and Propagation of Foreign Polytype Inclusions during Seeded Sublimation Growth of Silicon Carbide, Crystal Growth Design. Vol. 15 (2015) 15 p.156−163
M. Seiss, T. Ouisse, D. Chaussende, Comparison of the spiral growth modes of silicon-face and carbon-face silicon carbide crystals, Journal of Crystal Growth, Vol. 384 (2013) p. 129-134.
I.G. Galben-Sandulache, M. Marinova, A. Mantzari, G.L. Sun, A. Andreadou, D. Chaussende, E.K. Polychoniadis, Quality Investigation of 3C-SiC Crystals Grown by CF-PVT Technique, Materials Science Forum, Vol. 679-680 (2011) p. 20-23.