Aller au menu Aller au contenu
Physico chemistry of solids, thin films, biotechnologies
Applications for micro & nano- technologies, energy, health ...

> lmgp_eng_labo > LMGP_ news

Seminar LMGP - 15/10/2019 - Andrii Voznyi

Published on October 8, 2019
A+Augmenter la taille du texteA-Réduire la taille du texteImprimer le documentEnvoyer cette page par mail Partagez cet article Facebook Twitter Linked In
Seminar October 15, 2019
Grenoble INP - Phelma
3 parvis Louis Néel - 38000 Grenoble
Accès : TRAM B arrêt Cité internationale
2:00 pm - Seminar room LMGP - second floor

SnxSy thin films and application in heterojunction solar cells

andrii

andrii

Andrii Voznyi
Postdoctoral researcher

Abstract
Thin film photovoltaics based on tin monosulfide (SnS) is currently under intense research, as SnS is considered a promising, earth abundant and non-toxic replacement for the absorber layer in thin film solar cells based on the traditional CdTe, CuInSe2 (CIS), or Cu(In,Ga)(S,Se)2 (CIGSS) absorbers. Meanwhile, tin sulfide may also crystallise in a SnS2 phase with a higher band gap of 2.2-2.8 eV. This band gap makes SnS2 particularly attractive for application as the n-type buffer layer in the heterojunction solar cells. This talk focuses mainly on characterization and post-growth treatment of SnxSy thin films obtained by close spaced sublimation (CSS) and atomic layer deposition (ALD) techniques, and application of such layers in heterojunction solar cells. In particular, the ability to control the SnxSy crystal phases, morphology, optical and electrical properties by both variation of growth conditions and type of the substrate will be discussed. Non-traditional approaches were also applied to fabricate the pure-phase SnS thin films and two-layer n-SnS2-p-SnS heterojunction structures, including thermal vacuum annealing and laser irradiation of initial single-phase SnS2 films, respectively. Lastly, the photovoltaic behavior of SnS-based heterojunctions in various stack configurations, using different back contact materials, buffer layer compositions, SnS crystal phases and thicknesses of buffer and absorber layers will be briefly discussed.


A+Augmenter la taille du texteA-Réduire la taille du texteImprimer le documentEnvoyer cette page par mail Partagez cet article Facebook Twitter Linked In

Date of update October 8, 2019

Univ. Grenoble Alpes