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New Crystal Growth paper by N. Tsavdaris

Published on September 26, 2015
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News, Communique January 1, 2015

The paper "Macroscopic Approach to the Nucleation and Propagation of Foreign Polytype Inclusions during Seeded Sublimation Growth of Silicon Carbide" has been published in Crystal Growth and Dessign

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You will find here the paper by Nikolaos Tsavdaris. Here you have the abstract:
"The nucleation and propagation of foreign polytypes during sublimation growth of SiC is addressed, using experiments and simulation. The occurrence of a foreign polytype is linked to the combined effects of (i) the presence of the natural {0001} facets and (ii) the minimization of 2D nucleation energy. Areas with a high probability of foreign polytype nucleation can thus be predicted."

DOI:10.1021/cg501095b

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Date of update January 7, 2017

Univ. Grenoble Alpes