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Seminar LMGP - 10/03/2017 - Nathanaelle Schneider

Published on February 6, 2017
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Seminar March 10, 2017
2:00pm - 2nd floor - seminar room
Grenoble INP - Phelma
Laboratoire LMGP
3 parvis Louis Néel - 38000 Grenoble
Accès : TRAM B arrêt Cité internationale
Free entrance - No registration

Atomic Layer Deposition (ALD) of Ga-containing sulfide materials for applications in photovoltaics

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schneider n.jpg

Dr. Nathanaelle Schneider
CNRS-IRDEP (Institut de Recherche et Développement sur l’Energie Photovoltaïque), UMR7174 - EDF/CNRS/Chimie ParisTech, 78401 Chatou
Institut du Photovoltaïque d’Ile de France (IPVF), 92160 Antony

Abstract
Atomic layer deposition (ALD) is a well-adapted technique to control thin film properties and interfaces, which is fundamental in photovoltaics.
Our group has developed the ALD of various sulfide and oxysulfide materials such as In2S3, CuxS, CuInS2, Zn(O,S) or In2(O,S)3 and has applied them in CIGS solar cells. More recently, we developed the synthesis of gallium-containing sulfide materials (GaxS, CuxGayS). For each growth processes, the influence of precursors, the involved surface chemistry and the film properties are systematically explored, using ex-situ characterization techniques such as SEM, XRD, EDS, Hall effect measurements, UV–vis spectroscopy, or XPS fine profiling studies. Added to those, numerical methods (DFT) have been used to determine some growth characteristics of GaxS, explore structures and energies of key intermediates, transition states, side-reactions, rearrangement on the surface

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Date of update March 6, 2017

Univ. Grenoble Alpes