FETs based on semiconductor nanonets for electrical detection of biomolecules : DNA, acetone
The objective of this research axis is to develop sensors that benefit from the nanowire advantages for detection while being easy to integrate into electrical devices and compatible with integration on CMOS integrated circuits. Thus, it becomes possible to couple detection, reading and signal conditioning for a reduced footprint. This axis is based on the materials developed by the research theme "Wet Chemistry and Surface Functionalization" (link).
Thus, our unique international expertise encompasses the fabrication, the functionalization and the integration of two-dimensional (2D) Si nanonets for electrical DNA detection and 2D ZnO nanonets for electrical acetone gas detection.
A nanonet is a two-dimensional network of randomly oriented nanowires (link). We focus our research on semiconducting nanonets, particularly those based on Si and ZnO nanowires, so that their electrical properties are changed when events occur on their surfaces. The events we are currently interested in are DNA hybridization, protein recognition or acetone adsorption, the latter being a marker of diabetes.
From wafer to biosensor made of nanonet-based FETS
European H2020 Research Innovative Action “Nanonets2Sense” (2016-2019)
IRS project “APTANANOFET : Development of nanowire based aptasensors for field effect detection” (2017-2020)
European Flag ERA Project « CONVERGENCE », Frictionless Energy efficient Convergent Wearables for Healthcare and Lifestyle applications (2017-2020)
IDEX Innovation Grant Project “ Electrical detection of DNA hybridization by PCR amplification on Si-nanonet-FET “ (2018-2020)
1-“First evidence of superiority of Si nanonet field effect transistors over multi-parallel Si nanowire ones in view of electrical DNA hybridization detection.”
Nguyen, T.T.T., Legallais, M., Morisot, F., Cazimajou, T., Stambouli-Sene, V., Mouis, M., Salem, B., & Ternon, C. , Materials Research Express 6 016301 (2019)
2-“On the Development of Label-Free DNA Sensor Using Silicon Nanonet Field-Effect Transistors”
T. T. T. Nguyen, M. Legallais, F. Morisot, T. Cazimajou, M. Mouis , B. Salem, V. Stambouli and C. Ternon, Proceedings 312, 1 (2017)
3-“An innovative large scale integration of silicon nanowire-based field effect transistors”
M Legallais, TTT Nguyen, M Mouis, B Salem, E Robin, P. Chenevier, C. Ternon
Solid-State Electronics 143 (2018) 97-102