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New FM2N paper by S.Guillemin

Published on September 30, 2015
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News, Communique from August 14, 2015 to September 14, 2015

The paper "Controlling the Structural Properties of Single Step, Dip Coated ZnO Seed Layers for Growing Perfectly Aligned Nanowire Arrays" has been published in The Journal of Physical Chemistry C.

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guillemin.JPG

You will find  here  the paper by  Sophie Guillemin. Voici l'abstract:

"Mastering the structural ordering of ZnO seed layers by sol−gel process in terms of  ultrathin thickness (i.e, <10 nm), strong c-axis texture, low mosaicity, low porosity, and low roughness is a critical challenge for the formation of well-ordered ZnO nanowires in solution. The effects of the solution concentration, of the withdrawal speed, and of the annealing process on the formation mechanisms of ZnO seed layers deposited by single dip process are revealed. The size and density of primary clusters in the sol are found to govern the evolution of the film thickness and nanoparticle average diameter through the solution concentration. The Landau−Levich theory modeling the dragging process accounts for the evolution of the film thickness only before annealing and over a reduced range of withdrawal speeds. The texture mechanisms along the c-axis are driven by particle/particle interactions during annealing and explained in the light of thermodynamic considerations. They are further determined locally by electron backscattered diffraction. Importantly, an alternative annealing process under argon flux is specifically developed for sol−gel process and is shown to form remarkably well-textured, compact ZnO seed layers with a very low mosaicity and porosity as well as a thin thickness as small as 10 nm. These ZnO seed layers lead to the growth of well-ordered ZnO nanowires by chemical bath deposition with a remarkable mean tilt
angle smaller than 6° as deduced by X-ray pole figures. These findings represent a significant step toward the more efficient integration of ZnO seed layers grown by sol−gel process into ZnO nanowire-based devices."
DOI: 10.1021/acs.jpcc.5b06180
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Date of update November 21, 2015

Univ. Grenoble Alpes