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New paper by Stephane Brochen

Published on August 4, 2016
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Communique from July 24, 2016 to July 31, 2016

The paper "Effect of Strontium Incorporation on the p-Type Conductivity of Cu2O Thin Films Deposited by Metal–Organic Chemical Vapor Deposition" has been published in Journal of Physical Chemistry C

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Here you can find  the paper by Stephane Brochen

"Temperature-dependent Hall effect and resistivity measurements are performed on polycrystalline Cu2O:Sr thin films deposited on glass substrate by metal organic-chemical vapor deposition. Their electrical properties are studied as a function of
the strontium content, as determined by wavelength dispersive X-ray spectrometry. These electrical transport measurements highlight a copper vacancy doping mechanism induced by strontium incorporation, leading to a large decrease of the resistivity as low as 1.2 Ω.cm and corresponding free carrier mobilities about 15 cm2·V−1·s−1 at room temperature. Moreover, in addition to the main copper vacancy acceptor level, found at EA1= 278±21 meV above the top of the valence band, a coexisting shallower acceptor level with an ionization energy of EA2= 133±15 meV occurs for a strontium content above 5% and is tentatively assigned to a large size impurity−vacancy complex"

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Date of update August 4, 2016

Univ. Grenoble Alpes