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Paper by Fanny Morisot 2019

Published on June 19, 2019
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Communique from June 19, 2019 to July 20, 2019

The paper "Al2O3, Al doped ZnO and SnO2 encapsulation of randomly oriented ZnO nanowire networks for high performance and stable electrical devices" has been published in Nanotechnology

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Here you will find Fanny Morisot's paper:
 

"Two-dimensional (2D) randomly oriented nanowire networks, also called nanonets, have remarkable advantages including low-cost integration, good reproducibility and high sensitivity, which make them a promising material for electrical devices. With this work, we focus on the study of ZnO nanonet as channel materials in field effect transistors (FETs). In our process, ZnO nanowires were assembled in NNs by the liquid filtration method and were integrated in transistors, with the bottom-gate configuration, using simple technological steps. Non-encapsulated devices exhibited state of the art performances but their stability toward air exposure was poor. Using a proper encapsulation of the nanonets, with cheap abundant and non-toxic oxides, we demonstrate our ability not only to stabilize their electrical properties, but also to enhance performance to values never reach before for ZnO nanowire-based transistors. Our best FETs exhibit a low off-current while maintaining very good on current, which results in a Ion/Ioff ratio exceeding 106 for a drain voltage of 5V. The behavior of these ZnO NN-based FETs was studied for three different encapsulation materials, alumina (Al2O3), tin oxide (SnO2) and Al-doped ZnO (AZO). These results prove that ZnO NNs are highly promising materials for an easy and low-cost integration into FETs."


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Date of update July 15, 2019

  • Tutelle CNRS
  • Tutelle Grenoble INP
Univ. Grenoble Alpes