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Paper by Hongjun Liu

Published on September 22, 2018
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Communique from September 22, 2018 to October 18, 2018

The paper "Visualization of nanocrystalline CuO in the grain boundaries of Cu2O thin films and effect on band bending and film resistivity" has been published in APL Materials.

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Here  you'll find Honjun's paper
"Direct evidence for the presence of a CuO structure in the grain boundaries of Cu2O thin films by chemical vapor deposition is provided by high resolution automated phase and orientation mapping (ASTAR), which was not detectable by classical transmission electron microscopy techniques. Conductive atomic force microscopy (CAFM) revealed that the CuO causes a local loss of current rectification at the Schottky barrier between the CAFM tip and Cu2O. The suppression of CuO formation at the Cu2O grain boundaries is identified as the key strategy for future device optimization."


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Date of update September 22, 2018

  • Tutelle CNRS
  • Tutelle Grenoble INP
Univ. Grenoble Alpes