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Paper by Maxime Legallais 2019

Published on November 11, 2019
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Communique from November 7, 2019 to November 21, 2019

The paper "Material engineering of percolating silicon nanowire networks for reliable and efficient electronic devices" has been published in Material Chemistry and Physics

Maxime's paper

Maxime's paper

Here you will find the paper by Maxime Legallais
"Motivated to produce reliable and performant SiNW-based transistors, we present in this work how percolating networks composed of randomly oriented SiNWs, called nanonets, are a promising material if they are well engineered. We demonstrate that a proper material engineering of nanonets via alumina encapsulation allows to drastically enhance the electrical characteristics of back gate field effect transistors (FETs). Based on a simple, low temperature (≤400 °C) and up-scalable process of integration, the fabricated FETs exhibit a low off-current in the picoampere range while maintaining very good on-performance, up to the microampere and thus on-to-off ratio exceeding 105. As stated in this work, these nanonet-FETs present not only comparable electrical performances to reported single SiNW-based transistors with the same back-gated architecture but also good device-to-device reproducibility. This initial benchmarking clearly indicates that Si nanonet-based devices display essential features in terms of performances and fabrication process for sensing and flexible electronics."


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Date of update November 11, 2019

  • Tutelle CNRS
  • Tutelle Grenoble INP
Univ. Grenoble Alpes