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Synthèse et propriétés de monocristaux, de poudres, films minces ou hétérostructures

Etudes à l'interface avec la matière biologique

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Design of engineered oxide thin films for future micro- and nano- electronic devices

Project ID: ANR-14-ACHN-0012ANR 

Program: Hosting high-level researchers / Accueil de Chercheurs de Haut Niveau (@RAction) 2014
Duration 3/2015 -2/2019

Project coordinator:
 Monica Burriel (Laboratoire des Matériaux et du Génie Physique)
Post-doc: Sarunas Badgzevicius
PhD StudentKlaasjian Maas

The goal of this project is to design strain engineered thin films, aiming towards the development of oxide electronic materials with tailored functional properties, such as ReRAM memories and neuromorphoric devices. In particular the research focuses on the synthesis (by injection MOCVD) and the tailoring of two fascinating and intriguing families of layered oxide materials (Re2NiO4+δ rare-earth nickelates and ReBaCo2O5.5+δ double perovskites), both of great interesting from both fundamental and applied perspectives.


Contributions to Conferences:


1.    Electroceramics XV, Limoges (France), June 2016, “Mixed conducting manganite thin films for ReRAM applications: Role of the electrodes and of the active material composition”, (poster) M.Burriel, A., Hornes, C. Jiménez, R. Schmitt, M. Boudard, O. Chaix-Pluchery, A.M. Saranya, A. Morata, J.L.M. Rupp, and A.Tarancón

2.    E-MRS 2016 Spring Meeting, Lille, France, May 2016, “Electrochemical characterization of Co-substituted La0.8Sr0.2MnO3 perovskite oxides for electroceramic and memristive devices” (Oral), A. Hornes, R. Schmitt, M. Boudard, O. Chaix-Pluchery, A.M. Saranya, A. Morata, C. Jiménez, J.L.M. Rupp, A. Tarancón and M. Burriel

3.    COST MP1308 Action TO-BE Spring meeting 2016, Warwick, UK, April 2016, “Resistive switching in GdBaCo2O5+δ thin films” (poster) S. Bagdzevicius, R. Rodríguez-Lamas, C. Jimenez, M. Boudard, J. Santiso and M. Burriel

4.    SSI-20 International Conference on Solid State Ionics, Colorado, US, June 2015, “La0.8Sr0.2(Mn,Co)O3 Perovskite Oxides as Resistive Switches: Influence of B-site Substitution on the Resistive Switching Properties”, (Invited), M. Burriel, R. Schmitt, A.M. Saranya, A. Morata, A. Hornes, S. Schweiger, M. Boudard, J.L.M. Rupp and A. Tarancón

5.    International Workshop on Advances in ReRAM: Materials & Interfaces, Chania, Crete, Greece, Oct 2015, “Resistive Switching in Co-substituted La0.8Sr0.2MnO3 Perovskite Oxides”, (Oral), M. Burriel, A. Hornes, R. Schmitt, M. Boudard, O. Chaix-Pluchery, C. Jiménez, A.M. Saranya, A. Morata, J.L.M. Rupp and A. Tarancón

6.    International School of Oxide Electronics (ISOE2015) summer school, Cargèse (Corsica), France, October 2015, “Optimization of the deposition of LaNiO3 thin films to be used as bottom electrodes for resistive switching memories”, (poster), K. Maas, M. Boudard, C. Jiménez, H. Roussel and M. Burriel


1.     Rencontres des Jeunes Physiciens, Edition grenobloise 2016, Grenoble, France, April 2016, “Resistive switching in double-perovskite GdBaCo2O5+δ thin films” (poster presentation), S. Bagdzevicius, R. Rodrígues-Lamas, C. Jimenez, M. Boudard, J. Santiso and M. Burriel.

Rédigé par David Munoz-Rojas

mise à jour le 16 mars 2017

  • Tutelle CNRS
  • Tutelle Grenoble INP
Communauté Université Grenoble Alpes