Nouvelle publication FM2N M. Le Gallic

Le papier "Particular structural defects in Ta2O5 from crystallisation of amorphous thin films in O2–H2O atmosphere" est apparu dans Acta Materiala
Vous trouverez ici le papier de Marie Le Gallic. Voici l'abstract:

"Structural defects within Ta2O5 monoclinic structures were obtained by crystallisation at 850 C in atmosphere O2–H2O of amorphous thin films deposited by injection metal-organic chemical vapour deposition (i-MOCVD) on Si substrates. These defects, observed by high resolution transmission electron microscopy (HRTEM), contain alignments of Ta5+ vacancies along a crystallographic direction [001]. H2O gas of different partial pressures was obtained by bubbling O2 gas through deionised water or Na2CO3–K2CO3 aqueous solution maintained at different temperatures in a range of 25–45 C. The amount of structural defects increases dramatically with H2O partial pressure and annealing time from HRTEM observations and X-ray diffraction results. Such defects are thermally stable, at least up to 850 C. Using Na2CO3–K2CO3 aqueous solution, similar structural defects including mainly K+ species were formed. Na+ species contributes mostly to the formation of another phase of composition close to (Na0.8K0.2)2Ta4O11 of natrotantite type structure. Assuming that Ta5+ vacancies are occupied by H+ in a form of bridging hydroxyl groups Ta–OH–Ta in order to satisfy electrical neutrality, the presence of significant levels of hydrogen atoms within Ta2O5 concordant with H enrichment at defects was identified by time-of-flight secondary ion mass spectrometry (ToF-SIMS)."

DOI:10.1016/j.actamat.2015.04.041