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Maître de conférence à Phelma / Grenoble-INP


office 1-05 Postal address: Grenoble-INP Minatec 3, parvis Louis Néel BP257 F-38016 GRENOBLE cedex 1

  • Tél. : 04 56 52 93 33
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Activités / CV

Born on 25th February 1975 in Kozani (Greece)
Nationality: Greek


  • 1998-2000:   Master in Materials Physics, Aristotle University of Thessaloniki, Greece
  • 2001-2004:   PhD in Physics, Joseph Fourier University - Grenoble 1 / CEA-Grenoble / Lab. d’ Etude des Matériaux par Microscopie Avancée (INAC/LEMMA)                      Subject: Electron Microscopy and Nitride Nanostructures (Superv.: Dr. J.L. Rouviére) 

Professional Experience

  • Since 2006: Associated Professor (MdC) in Grenoble-INP / Phelma
  • 2005 -2006: Post Doctoral studies at CEA-Grenoble / INAC/ NPSC
  • 2004 -2005: Lecturer (ATER) at Joseph Fourier University
  • 2000 -2001: Engineer, Aristotle University of Thessaloniki

Research Interests

  • III-Nitride Semiconductors

Structural Characterization: Use of Transmission Electron Microscopy (TEM) in high resolution, energy filtered, conventional and convergent beam modes to characterize nitride nanostructures (quantum wells and dots). Quantitative analysis of HRTEM images using the geometric phase analysis, a projection method and images simulations.
Epitaxy : Experience in Molecular Beam Epitaxy of III-nitride materials and heterostructures. In situ analytics of growth kinetics by RHEED.
X ray Absorption spectroscopy (Synchrotron, ESRF): Use of x-ray linear dichroism (XLD) and x-ray magnetic circular dichroism (XMCD) techniques. Selected publications

  •  Superconductors

Structural Characterization: Use of TEM techniques to characterize the microstructure of superconducting layers (YBCO) and oxide buffer layers (LZO, CeO2) deposited on LaAlO3 and NiW substrates.
Chemical Deposition: Experience on Metal Organic Deposition (MOD) and various annealing treatments used for the growth of oxide buffer layers.

Keywords: TEM, Nitrides, MBE, X-ray absorption, MOD, Nanostructures, Supraconductors, Thermal treatment.

                                      Selected publications

  1. Intraband emission at lambda approximate to 1.48 µm from GaN/AlN quantum dots at room temperature
    L. Nevou, F. H. Julien, M. Tchernycheva, F. Guillot, E. Monroy, E. Sarigiannidou, Appl. Phys. Lett. 92, 161105 (2008)
  2. Excitonic giant Zeeman effect in GaN:Mn3+
    W. Pacuski, D. Ferrand, J. Cibert, J.A. Gaj, A. Golnik, P. Kossacki, S. Marcet, E. Sarigiannidou, H. Mariette Phys. Rev. B 76 165304 (2007)
  3. Depth dependence of the Mn valence and Mn-Mn coupling in (Ga,Mn)N
    A. A. Freeman, K. W. Edmonds, N. R. Farley, S. V. Novikov, R. P. Campion, C. T. Foxon, B. L. Gallagher, E. Sarigiannidou, G. van der Laan, PRB 76 081201 (2007)
  4. Comparison of the structural quality in Ga-face and N-face polarity GaN/AlN multiple-quantum-well structures
    E.Sarigiannidou, E. Monroy, N. Gogneau, G. Radtke, P. Bayle-Guillemaud, E. Bellet-Amalric, B. Daudin, and J.L. Rouvière, Semiconductor Science and Technology 21 612 (2006)
  5. Intrinsic ferromagnetism in wurtzite (Ga,Mn)N semiconductor
    E.Sarigiannidou, F. Wilhelm, E. Monroy, R. M. Galera, E. Bellet-Amalric, A. Rogalev, J. Cibert, J.Goulon and H. Mariette, Phys. Rev. B 74 041306(R) (2006)
  6. Strain distribution in GaN/AlN quantum dots superlattices
    E. Sarigiannidou, A.D. Andreev, B. Daudin, and J.L. Rouvière, Appl. Phys. Lett. 87 203112 (2005)
  7. Theoretical discussions on the geometrical phase method
    JL Rouviere , E Sarigiannidou Ultramicroscopy 106 1 (2005)
  8. Influence of AlN overgrowth on Structural Properties of GaN Quantum Wells and Quantum Dots Grown by Plasma-Assisted Molecular Beam Epitaxy
    N. Gogneau, D. Jalabert, E. Monroy, E. Sarigiannidou, J.L.Rouvière, T.Shibata, M.Tanaka, J.M. Gerard, B. Daudin J. Appl. Phys 96 1104 (2004)
  9. Strain distribution in nitride quantum dots multilayers
    V. Chamard, T. Schülli, M. Sztucki, T. H. Metzger, E. Sarigiannidou, J. L. Rouvière, M. Tolan, C. Adelmann and B. Daudin Phys. Rev. B, 69, 125327 (2004)
  10. Linear alignment of GaN quantum dots on AlN grown on vicinal SiC substrate
    J. Brault,S. Tanaka, E. Sarigiannidou, J.-L. Rouvière, B. Daudin, G. Feuillet, H. Nakagawa J. Appl. Physics 93, 3108 (2003)
  11. GaN islanding by spontaneous rearrangement of a strained two-dimensional layer on (0001) AlN
    C. Adelmann, N. Gogneau, E. Sarigiannidou, J.-L. Rouvière, and B. Daudin Appl. Phys. Lett. 81, 3064 (2002)
  12. Structural Transitions of Inversion Domain Boundaries through Interaction with Stacking Faults in Epitaxial GaN.
    G.P. Dimitrakopulos, Ph. Komninou, J. Kioseoglou, Th. Kehagias, E. Sarigiannidou, A. Georgakilas, G. Nouet and Th. Karakostas Phys. Rev. B., 64, 245325 (2001)


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mise à jour le 20 mars 2019

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