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LMGP Seminar : A. SCHULMAN - The physics beneath the resistive switching effect in metal/complex oxide interfaces

Publié le 13 septembre 2013
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Conférence 1 octobre 2013
Tuesday at 2:00 pm - LMGP Conference room - 2nd floor
LMGP (UMR 5628 CNRS / Grenoble INP)
3 parvis Louis Néel - 38000 Grenoble

Accès : TRAM B arrêt Cité internationale

Free entrance - No registration
Alejandro Schulman.jpg

Alejandro Schulman.jpg

Alejandro Schulman,
PhD student :
Laboratorio de Bajas Temperaturas - Departamento de Fisica - Universidad de Buenos Aires - Argentina
& LMGP, Grenoble INP Phelma - MINATEC - GRENOBLE - France
Co-supervisors : M. Boudard (LMGP) & C. Acha (LBT-UBA)

The physics beneath the resistive switching effect in metal/complex oxide interfaces

Abstract
The main research topic of my thesis is the study of the physic mechanism of the resistive switching effect (RS) in metal/complex oxides interfaces for future applications in solid state memory devices (mainly RRAM). The RS is based on the non-volatile change of the resistance of the interfaces upon the application of an electric field. These devices are marked as one of the most promising candidates for the replacement of the current flash technology.
 In this talk I'll give an overlook of the state of the art physics mechanism for the RS effect along with our results in compounds: CuO, TiO2, YBa2Cu3O7- and La0.66Sr0.33MnO3 among others. Most of the effects here presented will be discussed by considering the physics derived from an electric field-induced oxygen ion migration, which controls the electric transport properties of these metal/complex oxide interfaces. I'll also talk about some new approaches to improve the performance of these memory devices.

Short Bio
I was born in Buenos Aires, Argentina, and I've a physics degree from the University of Buenos Aires.
I'm currently a PhD student in Co-tutelle agreement between the physics department of the University of Buenos Aires (Argentina) and the IMEP2 doctoral school in Grenoble (France), currently in my 3rd thesis year.

My main topic of research is the study of the physic mechanism of the resistive switching effect both in simple and in complex oxides for future applications solid state memory devices (mainly RRAM).

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mise à jour le 24 septembre 2013

  • Tutelle CNRS
  • Tutelle Grenoble INP
Univ. Grenoble Alpes