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LMGP Seminar : M.Chubarov - CVD of sp2-BN thin films

Publié le 5 septembre 2014
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Colloque / Séminaire 4 novembre 2014
Tuesday at 2:00 pm - LMGP Conference room - 2nd floor
LMGP (UMR 5628 CNRS / Grenoble INP)
Grenoble INP Phelma Minatec
3 parvis Louis Néel - 38000 Grenoble

Access : TRAM B - Stop at "Cité internationale"
Free entrance - No registration
M. Chubarov.jpg

M. Chubarov.jpg

Mikhail Chubarov, Henrik Pedersen, Hans Högberg and Anne Henry
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics division, Linköping, Sweden, SE-58183
e-mail: mihails.cubarovs@liu.se, mihcu@ifm.liu.se

CVD of sp2-BN thin films


Abstract
Boron nitride (BN) has recently attracted considerable interest as a thin film material due to a beneficial combination of properties. This, the least investigated group 13 nitride is a promising material for electronic and optoelectronic devices in its sp2-hybridised state (sp2-BN), where it exhibits a wide band gap (~ 6 eV), low dielectric constant and possibility to be doped both p- and n-type. Moreover, BN based devices are predicted to be operational at high temperatures and in chemically demanding environments due to high thermal and chemical stability. In addition, the sp2-BN basal plane structure is similar to that of the graphene and with a lattice mismatch of only 2% to graphene. That makes sp2-BN suitable for use as a dielectric substrate for graphene. However, implementation of sp2-BN is hampered by the lack of a reliable synthesis route to prepare high quality thin films suitable for the suggested applications.
During my talk I will present my recent success in depositing sp2-BN thin films on different substrates by employing chemical vapour deposition (CVD). Results from characterisation of the deposited thin films will be presented in details.

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mise à jour le 3 novembre 2014

  • Tutelle CNRS
  • Tutelle Grenoble INP
Univ. Grenoble Alpes