LMGP / Grenoble INP Minatec 3 parvis Louis Néel - Grenoble Accès : Tram B - Cité Internationale
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Martin Seiss PhD student in SPCS/LMGP group since sept 2010 - Supervisor : T. OUISSE
Surface mechanisms controlling the PVT growth of SiC crystals
Silicon carbide (SiC) is a promising semiconductor for power electronics. Although there are SiC wafers up to 150 mm in diameter available on the market, the growth of SiC crystals is still a hot scientific topic.
This is due to the fact that the defect density is high, especially in comparison to silicon crystals. In addition, the challenging growth process is continuously improved and further developed. Also at the nanoscale there are many open questions and the aim of this work is to shed some light on these.
In this seminar the basic ideas of crystal growth related to the physical vapour transport (PVT) method are presented. Based on these ideas it is shown that important growth parameters can be obtained by ex-situ analysis of growth spirals. Such parameters are, for example, relative supersaturation during growth and the surface diffusion length. The experimental results are linked to simulations in order to establish models for the surface mechanisms.
With this image showing a micropipe observed by AFM after the physical vapour transport growth of a SiC crystal, Martin Seiss became the first laureate of the NanoART 2013 contest organized by nanoTox® and the Nanosciences Foundation in Grenoble.
Martin Seiss (born 1982 in Kempten, Germany) received a Bachelor's degree in material science from the University of Augsburg, Germany. In the framework of the FAME master he studied at the Grenoble INP and University of Darmstadt (Germany) and obtained a Master's degree from both institutions. Since 2010 he is a PhD student at the LMGP and working under the supervision of Thierry Ouisse in the SPCS group. In his PhD he is growing SiC crystals by PVT and analyzing their surface structure mainly by AFM in order to understand fundamental growth mechanism.
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