Aller au menu Aller au contenu
Synthèse et propriétés de monocristaux, de poudres, films minces ou hétérostructures

Etudes à l'interface avec la matière biologique

> LMGP_ Recherche > IMMB

Nouvelle publication IMBM par L. Fradetal

Publié le 11 mai 2016
A+Augmenter la taille du texteA-Réduire la taille du texteImprimer le documentEnvoyer cette page par mail Partagez cet article Facebook Twitter Linked In
Communiqué 12 mai 2016

Le papier "A silicon carbide nanowire field effect transistor for DNA detection" a été publié dans Nanotechnology

Vous trouverez ici le papier de Louis Fradetal. Voici l'abstract:
"This work reports on the label-free electrical detection of DNA molecules for the first time, using silicon carbide (SiC) as a novel material for the realization of nanowire field effect transistors (NWFETs). SiC is a promising semiconductor for this application due to its specific characteristics such as chemical inertness and biocompatibility. Non-intentionally n-doped SiC NWs are first grown using a bottom-up vapor–liquid–solid (VLS) mechanism, leading to the NWs exhibiting needle-shaped morphology, with a length of approximately 2 μm and a diameter ranging from 25 to 60 nm. Then, the SiC NWFETs are fabricated and functionalized with DNA molecule probes via covalent coupling using an amino-terminated organosilane. The drain current versus drain voltage (I d–V d) characteristics obtained after the DNA grafting and hybridization are reported from the comparative and simultaneous measurements carried out on the SiC NWFETs, used either as sensors or references. As a representative result, the current of the sensor is lowered by 22% after probe DNA grafting and by 7% after target DNA hybridization, while the current of the reference does not vary by more than ±0.6%. The current decrease confirms the field effect induced by the negative charges of the DNA molecules. Moreover, the selectivity, reproducibility, reversibility and stability of the studied devices are emphasized by de-hybridization, non-complementary hybridization and re-hybridization experiments. This first proof of concept opens the way for future developments using SiC-NW-based sensors."



A+Augmenter la taille du texteA-Réduire la taille du texteImprimer le documentEnvoyer cette page par mail Partagez cet article Facebook Twitter Linked In

mise à jour le 11 mai 2016

  • Tutelle CNRS
  • Tutelle Grenoble INP
Univ. Grenoble Alpes