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Synthèse et propriétés de monocristaux, de poudres, films minces ou hétérostructures

Etudes à l'interface avec la matière biologique

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Papier de Benjamin Meunier et Dolors Pla 2019

Publié le 11 mai 2019
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Communiqué du 15 mai 2019 au 9 juillet 2019

Le papier "Microscopic Mechanisms of Local Interfacial Resistive Switching in LaMnO3+d" a été publié dans ACS Applied Electronics Materials

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Ici vous trouverez le papier de Benjamin Meunier et Dolors Pla.
" Manganite perovskites exhibit promising resistive switching properties, for which the understanding of the related microscopic physicochemical changes taking place is still rather scarce. In this work the resistance of a LaMnO3+δ thin film has been locally tuned within a range of 2 orders of magnitude using conductive atomic force microscopy. With the use of X-ray photoemission electron microscopy it has been possible to simultaneously unravel composition and work function modification related to changes in the LaMnO3+δ resistance state. The resistance change is found to be triggered by oxygen ions drifting to the surface, where they remain adsorbed. Concomitant to this oxygen displacement, the Mn oxidation state is reduced from +3.6 to +3.1, while the work function decreases by 0.28 eV. We discuss the effect of these physicochemical modifications on the conduction mechanism, which is in agreement with a space-charge-limited conduction (SCLC) mechanism where the current is restrained by the density of traps at the interface. We show that the resistive switching in the material can be described as a change of the transport regime from a trap-free to a trap-controlled SCLC, depending on the oxygen content in the material. ."


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mise à jour le 11 mai 2019

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Univ. Grenoble Alpes