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Synthèse et propriétés de monocristaux, de poudres, films minces ou hétérostructures

Etudes à l'interface avec la matière biologique

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Papier de Klaasjan Maas 2019

Publié le 11 novembre 2019
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Communiqué du 4 novembre 2019 au 17 janvier 2020

Le papier "Using a mixed ionic electronic conductor to build an analog memristive device with neuromorphic programming capabiliti" a été publié dans Journal of Materials Chemistry C

la2niO4

la2niO4

Ici vous trouverez le papier de Klaasjan Maas

"Interface-type oxide-based valence-change memories (VCMs) with analog switching capabilities and memory transience are interesting candidates to be used as artificial synapses for the hardware implementation of artificial neural networks (ANNs) with short-term synaptic dynamics. Here, the mixed ionic-electronic conducting (MIEC) oxide La2NiO4+δ (L2NO4) is used to rationally design a new volatile interface-type valence-change memory based on a tunable p–n junction between a p-type MIEC oxide and an n-type “oxygen-reservoir” oxide. The memory does not require a forming step to trigger memristance and exhibits a highly multilevel and bipolar analog-type change in resistance, which can be continuously varied by over two orders of magnitude. A distinctive two-step memory transience where the resistance of the unbiased device increases before relaxing back to a lower resistance state was measured and has been attributed to the Fick diffusion of oxygen ions, restoring the drift-induced concentration gradients at the Ti/L2NO4 interface."


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mise à jour le 11 novembre 2019

  • Tutelle CNRS
  • Tutelle Grenoble INP
Univ. Grenoble Alpes